Thermal quenching of the self-activated band of ZnSe: Cl thin films grown by molecular beam epitaxy

We studied the themal quenching of the self-activated (SA) band of molecular beam epitaxy (MBE) grown ZnSe:Cl thin films by means of temperature dependen1 photo~uminescence (PL) experiments. We analyzed the spectra of the self-activated (SA) band as a function of temperature and C1 concentration. Al1 studied samples presented the emission of this band, however, the excitonic emission was observed only for those samples with lower C1 concentration. A different activation energy (E,) associated to quenching of the SA band was obtained for each sample. These values suggest that different electron and hole levels, which depend on C1 concentration, are associated to the mechanism of quenching of the SA band. O 2005 Elsevier Ltd. Al1 rights reserved.